to-92 plastic-encapsulate transistors SS8550 transistor ( pnp ) features power dissipation p c : 1 w (t a =25 ) maximum ratings (t a =25 unless otherwise noted) symbol param eter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current-continuous -1.5 a t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ m ax unit collector-base breakdown voltage v (br)cbo i c =-100ua, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-0.1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-40v, i e =0 -0.1 a emitter cut-off current i ceo v ce =-20v, i e =0 -0. 1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 ua h fe(1) v ce =-1v, i c =-100ma 85 400 dc current gain h fe(2) v ce =-1v, i c =-800ma 40 collector-emitter saturation voltage v ce(sat) i c =-800ma, i b =-80ma -0.5 v base-emitter saturation voltage v be(sat) i c =-800ma, i b =-80ma -1.2 v base-emitter voltage v be(on) v ce =-1v, i c =-10ma -1 v out capacitance co b v cb =-10v, i e =0ma,f=1mh z 20 pf transition frequency f t v ce =-10v, i c =-50ma,f=30mh z 100 mhz classification of h fe(2) rank b c d d3 range 85-160 120-200 160-300 300-400 to-92 1. emitter 2. base 3. collector b,sep,2011 tiger electronic co.,ltd
-1 -10 -100 -1000 10 100 1000 -0 -1 -2 -3 -0 -50 -100 -150 -200 -250 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -10 -100 -1000 -1 -10 -100 -1000 -1 -10 -100 -1000 -2 -10 -100 10 100 1000 -0.1 -1 -10 100 -1500 t a =25 -300 t a =100 common emitter v ce =-1v h fe ?? i c 300 30 -30 -3 dc current gain h fe collector current i c (ma) common emitter t a =25 static characteristic -1.0ma -0.7ma -0.9ma -0.6ma -0.5ma -0.8ma -0.4ma -0.3ma -0.2ma i b =-0.1ma collector current i c (ma) collector-emitter voltage v ce (v) -1500 -300 t a =100 t a =25 =10 -30 -3 v besat ?? i c base-emmitter saturation voltage v besat (v) collector current i c (ma) p c ?? t a collector power dissipation p c (w) ambient temperature t a ( ) -1500 -300 t a =100 SS8550 typical characteristics t a =25 -30 -3 common emitter v ce =-1v collector current i c (ma) base-emitter voltage v be (v) -1500 -3 -300 t a =100 -300 -30 -30 -3 v cesat ?? i c =10 t a =25 collector-emmitter saturation voltage v cesat (mv) collector current i c (ma) f t ?? i c 300 30 -30 -6 common emitter v ce = -10v t a =25 transition frequency f t (mhz) collector current i c (ma) v cb / v eb 30 10 i c ?? v be c ob c ib -0.3 -20 -3 f=1mhz i e =0/i c =0 t a =25 c ob / c ib ?? capacitance c (pf) reverse bias voltage v (v) b,sep,2011
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